Products Description
β-Gallium oxide/Ga2O3, commonly known as gallium oxide, has been the focus of the semiconductor field in recent years and represents a new chapter in the fourth generation of semiconductors. In the laboratory, researchers continue to make eye-catching breakthroughs, and its The pace of mass production and commercialization is also continuing to accelerate.
Gallium oxide has good chemical and thermal stability, with a bandgap width of 4.7-4.9eV and a critical breakdown field strength of 8 MV/cm (much higher than the theoretical limit of 2.5 MV/cm for SiC and 3.3 MV for GaN /cm), the electron mobility is 250 cm2/V·s, and it has strong transparent conductivity. The Baliga figure of merit exceeds 3000, which is several times that of GaN and SiC materials.
β-Ga2O3 also has broad application prospects in the field of solar blind ultraviolet (200~280 nm) detection. The bandgap width of gallium oxide is 4.8-4.9 eV, and the corresponding absorption band edge is around 250 nm. It does not require alloying processes similar to AlGaN and ZnMgO. It is an ideal material for making sun-blind ultraviolet detectors.
Gallium oxide (β-Ga2O3) crystal has stable chemical properties, is not easily corroded, has high mechanical strength, stable performance at high temperatures, and has high visible and ultraviolet transparency. It is especially transparent in the ultraviolet and blue light regions. This is a traditional transparent conductive material. Therefore, β-Ga2O3 single crystal can become a new generation of transparent conductive materials and be applied in solar cells and flat panel display technology. The conductivity of β-Ga2O3 single crystal changes with changes in the surrounding environment and can be used in gas detection technology.
Product Parameters
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Gallium oxide single crystal substrate |
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size |
2" and customized |
5mm*5mm～20mm*20mm |
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Planes |
<001>,<100> |
<-201>,<010> |
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Deviation |
<1° or customized declination angle |
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Thickness |
650±50μm or customized |
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Conductivity type |
N, semi-insulated |
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Resistivity |
<1ω•cm>1x1010Ω•cm |
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XRD half maximum width |
<150arcsec |
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Surface roughness Ra |
<0.5nm |
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Gallium oxide epitaxial wafer |
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• Gallium oxide substrate |
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size |
2" and customized |
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Planes |
<001>or customized |
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Dopant |
Si, Sn, Fe |
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Thickness |
650±50μm or customized |
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XRD half maximum width |
<150arcsec |
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• Gallium oxide homoepitaxial layer |
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Dopant |
UID or Si |
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Carrier concentration |
2x1016～1x1018 |
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TThickness |
5～20μm |
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Advantages of gallium oxide：
Wide Bandgap: Gallium oxide has a wide bandgap of approximately 4.8-4.9 electron volts, making it advantageous in applications such as UV detectors and power supply equipment.
High-temperature stability: Good high-temperature stability, it can work in environments up to 1200 degrees Celsius, making it suitable for high-temperature, high-power, and high-frequency application scenarios.
High breakdown field strength: Gallium oxide has a high breakdown electric field strength, making it widely used in high-voltage equipment.
Good optical properties: good optical transparency in a wide wavelength range from ultraviolet to infrared.
Good chemical stability: Gallium oxide has high chemical stability at room temperature and pressure, and has good tolerance to many acids and bases.
These characteristics make gallium oxide have broad application potential in the fields of power electronics, optoelectronics, photocatalysis, gas sensors and other fields.
Product Application
Gallium oxide can be used in radiation detection sensor chips in communications, radar, aerospace, high-speed trains, new energy vehicles and other fields. Especially in high-power, high-temperature and high-frequency devices, gallium oxide has a higher performance than silicon carbide and gallium nitride. There are greater advantages in many aspects.
Power devices made of gallium oxide are superior to products made of silicon carbide and gallium nitride in terms of performance, cost, and application range. In the next ten years, as demand escalates, gallium oxide is expected to gradually replace carbon and nitride. Gallium oxide and other third-generation semiconductor materials.
Applications & Features
Fiber doping Gallium oxide
Battery materials Gallium oxide
solid state battery Gallium oxide
semiconductor Gallium oxide
crystal Gallium oxide
ceramics Gallium oxide
Thin Film Science and Technology Gallium oxide
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